Magnetosensory power devices based on AlGaN/GaN heterojunctions for interactive electronics

In this work, we demonstrate a magnetosensory power device (MPD) that can utilize external magnetic field to modulate the output power of the device by the emulation of magnetoreception in nature. Based on the piezotronics effect, the strain-induced piezoelectric polarization charges can modify the energy band profile of the local AlGaN/AlN/GaN heterojunction, and effectively adjust the 2DEG concentration to tune/control the output power of the MPD. Due to the design of the magnetic cantilever of the MPD, the external magnetic field can introduce a normal compressive strain at the front end of the cantilever, thereby triggering the piezotronics effect. Under the action of the external magnetic field of mT, when the gate voltage is -5 V, the saturation output power density of MPD increases quasi-linearly from 18.04 W/mm^2 to 18.94 W/mm^2, showing good magnetic field-power modulation characteristics. Meanwhile, the gate voltage of MPD can control the working point of the output power in a larger range. The maximum output power density of MPD can reach 85.8 W/mm^2 at 1 V gate voltage under the 200 mT magnetic field, thereby realizing the two-dimensional control of the output power by the external magnetic field and the gate voltage.