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In this work, I develop the fabrication process of GaN power MEMS devices with micro/nano manufacturing technologies.
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Background
In this work, I develop the fabrication process and process flow of GaN power MEMS devices in detail. There are six main parts in the preparation process, and a total of about eighty specific steps. The purpose, recipe, and precautions of each process are briefly described. The description of repetitive processes is simplified by means of process integration, and therefore the logical structure of the fabrication process is highlighted. More importantly, the physical mechanism and process optimization of performance degradation during MEMS device fabrication are analyzed. As a result, high-performance GaN HEMTs and GaN power MEMS devices have been successfully fabricated.
Research Method
- Micro/nano manufacturing technologies
- Fabrication process optimization and process integration
Conclusion
The high-performance GaN HEMTs and GaN power MEMS devices have been successfully fabricated.
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Presentations
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Reference
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